| PART |
Description |
Maker |
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| OP269 OP269SLB OP269SLC OP269SLA |
GAALAS PLASTIC INFRARED EMITTING DIODES
|
Optek Technology
OPTEK[OPTEK Technologies]
|
| OP298 |
GaAlAs Plastic Infrared Emitting Diodes
|
Optek Technology
|
| OP294 OP299 |
GaAlAs Plastic Infrared Emitting Diode
|
OPTEK TECHNOLOGY INC
OPTEK[OPTEK Technologies]
ETC
|
| SFH4591 SFH4592 Q62702-P5059 Q62702-P5060 SIEMENSA |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| TSMF3700 |
GaAlAs/GaAlAs Infrared Emitting Diode in SMT Package
|
Vishay Siliconix
|
| TLN233 |
TOSHIBA Infrared LED GaALAs Infrared Emitter
|
TOREX SEMICONDUCTOR LTD.
Toshiba Semiconductor
|
| OP233 OP232 OP231 |
GaAs HERMETIC INFRARED EMITTING DIODES
GaALAs Hermetic Infrared Emitting Diode(铝砷化镓密封红外发光二极工作温度范围-65 125
|
OPTEK Technologies
Optek Technology
|
| KEM5001R |
Infrared Emitting Diode(GaAlAs)
|
KODENSHI KOREA CORP.
|
| HE8404SG |
GaAlAs Infrared Emitting Diode
|
N.A.
OPNEXT[Opnext. Inc.]
|
| HE8812SG |
GaAlAs Infrared Emitting Diode
|
OPNEXT[Opnext. Inc.]
|
| CL-304L |
Infrared Emitting Diodes(GaAlAs)
|
KODENSHI CORP.
KODENSHI[KODENSHI KOREA CORP.]
Kondenshi Corp
|
